8 ? 2004 ixys all rights reserved hiperfet tm power mosfet type v dss r ds(on) chip source - equivalent max. max. type bond wire device recommended data sheet v ? mm mils IXFD76N07-7X 70 0.015 7x 8.84 x 7.18 348 x 283 15 mil x 3 ixfh76n07 ixfd180n07-9x 0.007 9x 14.20 x 10.60 559 x 417 15 mil x 6 ixfk180n07 ixfd340n07-9y 0.005 9y 15.81 x 14.31 623 x 563 12 mil x 12 ixfn340n07 ixfd180n085-9x 85 0.007 9x 14.20 x 10.60 559 x 417 15 mil x 6 ixfk180n085 ixfd280n085-9y 0.005 9y 15.81 x 14.31 623 x 563 12 mil x 12 ixfn280n085 ixfd75n10-7x 100 0.026 7x 8.84 x 7.18 348 x 283 15 mil x 3 ixfh75n10 ixfd80n10q-8x 0.018 8x 12.2 x 7.20 480 x 283 15 mil x 4 ixfh80n10q ixfd170n10-9x 0.011 9x 14.20 x 10.60 559 x 417 15 mil x 6 ixfk170n10 ixfd230n10-9y 0.007 9y 15.81 x 14.31 623 x 563 12 mil x 12 ixfn230n10 ixfd70n15-7x 150 0.032 7x 8.84 x 7.18 348 x 283 15 mil x 3 ixfh70n15 ixfd150n15-9x 0.013 9x 14.20 x 10.60 559 x 417 15 mil x 6 ixfk150n15 ixfd50n20-7x 200 0.049 7x 8.84 x 7.18 348 x 283 15 mil x 3 ixfh50n20 ixfd60n20f-74 0.042 74 9.58 x 7.13 377 x 281 15 mil x 3 ixfh60n20f ixfd66n20q-72 0.044 72 8.89 x 7.16 350 x 282 15 mil x 3 ixfh66n20q ixfd88n20q-82 0.035 82 12.17 x 7.14 479 x 281 15 mil x 4 ixfh88n20q ixfd120n20-9x 0.020 9x 14.20 x 10.60 559 x 417 15 mil x 6 ixfk120n20 ixfd180n20-9y 0.014 9y 15.81 x 14.31 623 x 563 12 mil x 12 ixfn180n20 ixfd40n30q-72 300 0.095 72 8.89 x 7.16 350 x 282 15 mil x 3 ixfh40n30q ixfd40n30-7x 0.090 7x 8.84 x 7.18 348 x 283 15 mil x 3 ixfh40n30 ixfd52n30q-82 0.075 82 12.17 x 7.14 479 x 281 15 mil x 4 ixfh52n30q ixfd73n30q-8y 0.050 8y 13.98 x 9.02 550 x 355 12 mil x 6 ixfk73n30q ixfd90n30-9x 0.040 9x 14.20 x 10.60 559 x 417 15 mil x 6 ixfk90n30 ixfd130n30-9y 0.028 9y 15.81 x 14.31 623 x 563 12 mil x 12 ixfn130n30 chip size dimensions this table reflects only new designed chips. please contact factory for older designs. hiperfet tm power mosfets the hi gh per formance mos fet family of power mosfets is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling diodes" in a broad range of power switching applications. this class of power mosfet uses ixys' hdmos process, which improves the ruggedness of the mosfet while reducing the reverse recovery time of the fast intrinsic diode to 250 ns or less at elevated (150c) junction temperature. the performance of the fast intrinsic diode is comparable to discrete high voltage diodes and is tailored to minimize power dissipation and stress in the mosfet. chip-shortform2004.pmd 26.10.2004, 12:44 8
9 ? 2004 ixys all rights reserved type v dss r ds(on) chip source - equivalent max. max. type bond wire device recommended data sheet v ? mm mils ixfd13n50f-5f 500 0.420 5f 7.35 x 5.91 289 x 233 10 mil x 4 ixfh13n50f ixfd21n50f-7f 0.270 7f 8.89 x 7.16 350 x 282 15 mil x 3 ixfh21n50f ixfd24n50-7x 0.250 7x 8.84 x 7.18 348 x 283 15 mil x 3 ixfh24n50 ixfd26n50q-72 0.235 72 8.89 x 7.16 350 x 282 15 mil x 3 ixfh26n50q ixfd28n50f-74 0.220 74 9.58 x 7.13 377 x 281 15 mil x 3 ixfh28n50f ixfd32n50-8x 0.160 8x 12.2 x 7.20 480 x 283 15 mil x 4 ixfh32n50 ixfd40n50q-82 0.150 82 12.17 x 7.14 479 x 281 15 mil x 4 ixfh40n50q ixfd40n50q2-84 0.150 84 12.17 x 7.15 479 x 281 15 mil x 4 ixfh40n50q2 ixfd44n50f-8f 0.130 8f 13.98 x 9.02 550 x 355 12 mil x 6 ixfk48n50q ixfd48n50q-8y 0.110 8y 13.98 x 9.02 550 x 355 12 mil x 6 ixfk48n50q ixfd55n50-9x 0.100 9x 14.20 x 10.60 559 x 417 15 mil x 6 ixfk55n50 ixfd55n50f-9f 0.100 9f 14.20 x 10.60 559 x 417 15 mil x 6 ixfk55n50f ixfd66n50q2-94 0.085 94 14.20 x 10.60 559 x 417 15 mil x 6 ixfk66n50q2 ixfd80n50q2-95 0.070 95 15.81 x 12.50 623 x 492 15 mil x 6 ixfb80n50q2 ixfd80n50-9y 0.060 9y 15.81 x 14.31 623 x 563 12 mil x 12 ixfn80n50 ixfd36n55q2-84 550 0.180 84 12.17 x 7.15 479 x 281 15 mil x 4 ixfh36n55q2 ixfd72n55q2-95 0.080 95 15.81 x 12.50 623 x 492 15 mil x 6 ixfb72n55q2 ixfd60n55q2-94 0.010 94 14.20 x 10.60 559 x 417 15 mil x 6 ixfk60n55q2 ixfd23n60q-72 600 0.350 72 8.89 x 7.16 350 x 282 15 mil x 3 ixfh23n60q ixfd20n60-7x 0.350 7x 8.84 x 7.18 348 x 283 15 mil x 3 ixfh20n60 ixfd30n60q-82 0.250 82 12.17 x 7.14 479 x 281 15 mil x 4 ixfh30n60q ixfd36n60q-8y 0.170 8y 13.98 x 9.02 550 x 355 12 mil x 6 ixfk36n60q ixfd44n60-9x 0.140 9x 14.20 x 10.60 559 x 417 15 mil x 6 ixfk44n60 ixfd52n60q2-94 0.130 94 14.20 x 10.60 559 x 417 15 mil x 6 ixfk52n60q2 ixfd70n60q2-95 0.090 95 15.81 x 12.50 623 x 492 15 mil x 6 ixfb70n60q2 ixfd60n60-9y 0.090 9y 15.81 x 14.31 623 x 563 12 mil x 12 ixfn60n60 dimensions chip size hiperfet tm power mosfet this table reflects only new designed chips. please contact factory for older designs. hiperfet tm s offer extended dv/dt ruggedness the hiperfet tm series of power mosfets have an extended stress capability in applications where the intrinsic "free-wheeling diode" is used. both static and dynamic dv/dt withstand capability have been improved to offer a significant margin of safety in high stress conditions found in many types of inductive load switching applications. chip-shortform2004.pmd 26.10.2004, 12:44 9
10 ? 2004 ixys all rights reserved type v dss r ds(on) chip source - equivalent max. max. type bond wire device recommended data sheet v ? mm mils ixfd15n80-7x 800 0.700 7x 8.84 x 7.18 348 x 283 15 mil x 3 ixfh15n80 ixfd15n80q-7y 0.700 7y 8.89 x 7.16 350 x 282 15 mil x 3 ixfh15n80q ixfd17n80q-72 0.670 72 8.89 x 7.16 350 x 282 15 mil x 3 ixfh17n80q ixfd20n80q-8x 0.450 8x 12.2 x 7.20 480 x 283 15 mil x 4 ixfh20n80q ixfd23n80q-82 0.440 82 12.17 x 7.14 479 x 281 15 mil x 4 ixfh23n80q ixfd27n80q-8y 0.350 8y 13.98 x 9.02 550 x 355 12 mil x 6 ixfk27n80q ixfd34n80-9x 0.250 9x 14.20 x 10.60 559 x 417 15 mil x 6 ixfk34n80 ixfd38n80q2-94 0.250 94 14.20 x 10.60 559 x 417 15 mil x 6 ixfk38n80q2 ixfd50n80q2-95 0.170 95 15.81 x 12.50 623 x 492 15 mil x 6 ixfb50n80q2 ixfd44n80-9y 0.160 9y 15.81 x 14.31 623 x 563 12 mil x 12 ixfn44n80 ixfd12n90-7l 900 0.900 7l 8.91 x 7.22 351 x 284 12 mil x 4 ixfh12n90 ixfd16n90q-8x 0.650 8x 12.2 x 7.20 480 x 283 15 mil x 4 ixfh16n90q ixfd24n90q-8y 0.500 8y 13.98 x 9.02 550 x 355 12 mil x 6 ixfk24n90q ixfd26n90-9x 0.330 9x 14.20 x 10.60 559 x 417 15 mil x 6 ixfk26n90 ixfd39n90-9y 0.220 9y 15.81 x 14.31 623 x 563 12 mil x 12 ixfn39n90 ixfd6n100f-5f 1000 2.000 5f 7.35 x 5.91 289 x 233 10 mil x 2 ixfh6n100f ixfd6n100q-5u 2.000 5u 6.81 x 6.74 268 x 265 10 mil x 2 ixfh6n100q ixfd10n100-7y 1.200 7y 8.89 x 7.16 350 x 282 15 mil x 3 ixfh10n100 ixfd14n100q2-7f 1.000 7f 8.89 x 7.16 350 x 282 12 mil x 4 ixfh14n100q2 ixfd14n100-8x 0.750 8x 12.2 x 7.20 480 x 283 15 mil x 4 ixfh14n100 ixfd21n100q-8y 0.520 8y 13.98 x 9.02 550 x 355 12 mil x 6 ixfk21n100q ixfd21n100f-8f 0.520 8f 13.98 x 9.02 550 x 355 12 mil x 6 ixfk21n100f ixfd24n100-9x 0.420 9x 14.20 x 10.60 559 x 417 15 mil x 6 ixfk24n100 ixfd24n100f-9f 0.420 9f 14.20 x 10.60 559 x 417 15 mil x 6 ixfk24n100f ixfd38n100q2-95 0.280 95 15.81 x 12.50 623 x 492 15 mil x 6 ixfb38n100q2 ixfd36n100-9y 0.270 9y 15.81 x 14.31 623 x 563 12 mil x 12 ixfn36n100 ixfd3n120-4u 1200 4.500 4u 5.77 x 4.96 227 x 195 12 mil x 1 ixfp3n120 chip size dimensions hiperfet tm power mosfet this table reflects only new designed chips. please contact factory for older designs. ?q - class? and ?q2 - class? hiperfet tm mosfets for lower gate charge and faster switching new ?q - class? hiperfet mosfets (identified by the suffix letter q) are the result of a revolutionary new chip design, which decreases the mosfet?s total gate charge qg and the miller capacitance crss, while maintaining the ruggedness and fast switching intrinsic diode of the company?s current hiperfet product line. the result is a mosfet with dramatically improved switching efficiencies and thus enabling higher frequency operation and smaller power supplies. the newer ?q2-class? line combines the low gate charge advantages of q-class with a double-metal construction resul-ting in a new generation of mosfets with an intrinsic gate resistance an order of magnitude lower than conventional mosfets. the resulting reduction in switching losses allows large mosfets to operate up satisfactorily up to the multi- megahertz region. chip-shortform2004.pmd 26.10.2004, 12:44 10
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